jiangsu changjiang electron ics technology co., lt d sot-23-3l plastic-encapsulate mosfets general description the CJK3407 uses advanced trench technology to provid e excellent r ds(on) with low gate charge. this device is suitable for use as a load switch or in pwm applications. marking maximum ratings (t a =25 unless otherwise noted) parameter symbol v alue units units drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain cu rrent i d -4.1 a drain current-pulsed i dm -20 a power dissi pation p d 300 mw thermal resistance from junction to ambient r ja 417 /w junction temperature t j 150 storage temperature t stg -55~ +150 so t -23-3l 1. gate 2. source 3. drain d cjk34 07 p-channel 30-v(d-s) mosfet v (br)dss r ds(on) max i d -30v \60 m @ -10 v ? -4.1a? 87 m -4.5v? @ www.cj-elec.com 1 d , a ug ,2015 equivalent circuit
parameter symbol tes t condition min typ max unit static characteristics drain-source breakd own voltage v (br) dss v gs = 0v, i d =-250a -30 v zero gate voltage drai n current i dss v ds =-24v,v gs = 0v -1 a gate -source leakage current i gss v gs =20v, v ds = 0v 100 na v gs =-10v, i d =-4.1a 50 60 m ? drain-source on-resista nce (note 1) r ds(on) v gs =-4.5v, i d =-3a 68 87 m ? forwar d tranconductance (note 1) g fs v ds =-5v, i d =-4a 5.5 s gate threshold voltage v gs(th) v ds =v gs , i d =-250a -1 -1.4 -3 v diode forward voltag e (note 1) v sd i s =-1a,v gs =0v -1 v dynamic cha racteristics (note 2) input capacitance c iss 700 pf output capacitance c oss 120 pf reverse transfer capacitance c rss v ds =-15v,v gs =0v,f =1mhz 75 pf switching cha racteristics (note 2) turn-on delay ti me t d(on) 8.6 ns turn-on rise time t r 5.0 ns turn-off delay time t d(off) 28.2 ns turn-off fall time t f v gs =-10v,v ds =-15v, r l =3.6 ?,r gen =3 ? 13.5 ns notes: 1. pulse test: pulse widt h 300s, duty cycle 2%. 2. these parameter have no way to verify. www.cj-elec.com 2 d ,a ug ,2015 mosfet electrical characteristics t =25 unless otherwise specified a
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1e-5 -1e-4 -1e-3 -0.01 -0.1 -1 -10 -0 -1 -2 -3 -4 -0 -1 -2 -3 -4 -5 -0 -2 -4 -6 -8 -10 20 40 60 80 100 -2 -4 -6 -8 -10 30 60 90 120 150 180 -0 -1 -2 -3 -4 -5 -0 -5 -10 -15 -20 t a =25 pulsed t a =25 pulsed i s ?? v sd t a =25 pulsed source current i s (a) source to drain voltage v sd (v) t a =25 pulsed t a =25 pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) v gs =-4.5v v gs =-10v i d ?? r ds(on) on-resistance r ds(on) (m ) drain current i d (a) v gs ?? r ds(on) i d =-4.1a on-resistance r ds(on) (m ) gate to source voltage v gs (v) v gs =-10 -5.0 -4.5 -4.0v v gs =-3.5v v gs =-3.0v output characteristics drain current i d (a) drain to source voltage v ds (v) typical characteristics www.cj-elec.com 3 d,aug,2015
4 d,aug,2015 -3l -3l min. max . min. max. a 1.050 1.250 0.041 0.049 a1 0.000 0.100 0.000 0.004 a2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 d 2.820 3.020 0.111 0.119 e1 1.500 1.700 0.059 0.067 e 2.650 2.950 0.104 0.116 e e1 1.800 2.000 0.071 0.079 l 0.300 0.600 0.012 0.024 0 8 0 8 symbol dimensions in millimeters dimensions in inches 0.950(bsc) 0.037(bsc)
sot-23-3l tape and reel www.cj-elec.com 5 d ,a ug ,2015
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